Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
نویسندگان
چکیده
منابع مشابه
Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
College of Engineering, Universiti Tenaga Nasional (UNITEN), Kajang, Selangor, Malaysia. Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM), Bangi, Selangor, Malaysia. School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Arau Perlis, Malaysia. Indian Institute of Technology (IIT), Bombay, Powai, Mumbai, India. Faculty of Electronic and Comp...
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ژورنال
عنوان ژورنال: Journal of Applied Sciences
سال: 2011
ISSN: 1812-5654
DOI: 10.3923/jas.2011.1261.1266